Fabrication and characterization of spectrally selective glazing dielectric multilayer structures
https://doi.org/10.17586/2220-8054-2020-11-4-488-492
Abstract
We report the fabrication of three- and five-layered based TiO2/SiO2 dielectric structures as the back-end reflector application in thin film silicon solar cells. These dielectric structures are prepared by the combined sol-gel and spin-coating techniques. X-ray diffraction (XRD) analysis of both the three- and five-layered based structures confirmed the anatase phase of TiO2 with its dominant peak at 2θ = 25◦. Field-emission scanning electron microscopy (FESEM) study demonstrated the formation of three and five alternate layers of TiO2 and SiO2 films. Comparatively, five-layered based reflector yielded the maximum (100 %) reflectance in the near-infrared (NIR) wavelength region as evidenced by the UV-Vis spectroscopy investigation.
Supporting agencies: We acknowledge the support provided by the UGC-DAE CSR, Indore (India) for the XRD measurements.
About the Authors
Venkatesh Yepuri
Department of Nanotechnology, Swarnandhra College of Engineering and Technology; Amity Institiute of Nanotechnology, Amity University
India
India
Seetharampuram, Narsapur (A.P.)
Gurgaon, (Haryana)
R. S. Dubey
Department of Nanotechnology, Swarnandhra College of Engineering and Technology
India
India
Seetharampuram, Narsapur (A.P.)
Brijesh Kumar
Amity Institiute of Nanotechnology, Amity University
India
India
Gurgaon, (Haryana)
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Review
For citations:
Yepuri V., Dubey R.S., Kumar B. Fabrication and characterization of spectrally selective glazing dielectric multilayer structures. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(4):488–492. https://doi.org/10.17586/2220-8054-2020-11-4-488-492
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