Для цитирования:

 ,  ,  ,  ,   . Наносистемы: физика, химия, математика. 2020;11(3):301–306. https://doi.org/10.17586/2220-8054-2020-11-3-301-306

For citation:

Malik G., Kharadi M.A., Khanday F.A., Shah K.A., Parveen N. Negative differential resistance in gate all-around spin field effect transistors. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(3):301–306. https://doi.org/10.17586/2220-8054-2020-11-3-301-306