Indirect interaction of impurity spins on the surface of topological insulators
https://doi.org/10.17586/2220-8054-2017-8-3-386-390
Abstract
In this work, a mathematical model to study the indirect interaction in topological insulators was constructed. Analysis of the model was carried out numerically. We have calculated the indirect exchange interaction in the film of a topological insulator, for example Bi2Te3, within the s–d model. The calculations showed that the magnetic ordering of the impurity spins varies periodically with increasing distance between atoms, asymptotically decreasing to zero. λ is a parameter associated with hexagonal distortion and is a component of the dispersion relation. The dependence of the constants of the effective exchange interaction upon the λ parameter is shown; this parameter characterizes the crystal lattice geometry for a topological insulator.
Supporting agencies: This work was supported by Russian Foundation for Basic Research (grants No. 16-32-00230 mol a, No. 16- 07-01265), mathematical and numerical modeling was carried out within the framework of government task by the Ministry of Education and Science of the Russian Federation (research work title No. 2.852.2017/4.6).
About the Authors
A. V. Ten
Volgograd State University
Russian Federation
Russian Federation
Volgograd
M. B. Belonenko
Volgograd Institute of Business
Russian Federation
Russian Federation
Volgograd
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Review
For citations:
Ten A.V., Belonenko M.B. Indirect interaction of impurity spins on the surface of topological insulators. Nanosystems: Physics, Chemistry, Mathematics. 2017;8(3):386-390. https://doi.org/10.17586/2220-8054-2017-8-3-386-390
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