Preparation of Au/TiO2/Ti memristive elements via anodic oxidation
https://doi.org/10.17586/2220-8054-2017-8-6-823-829
Abstract
In the present paper we report utilization of porous and barrier type of titania films formed by anodic oxidation as an active layer of the memristive element in the Au–TiO2–Ti structure. The comparison of semiconductor properties of porous and barrier type of anodic titania was performed via the Mott–Schottky technique. The obtained memristive elements show the bipolar type of switching governed by Schottky barrier screening. For barrier type film the switching potential is equal to −1.5 V and the ratio of resistance in OFF and ON stage (Roff /Ron) is equal to 34. For porous type films, the switching potential is equal to −0.6 V and Roff /Ron = 131. Moreover, we observed the dependence of Roff /Ron on the voltage sweeping rate, which can be explained by the limitation in diffusion of oxygen vacancies through the oxide layer.
Keywords
memristor,
anodic titania,
anodic oxidation,
memristive element,
Schottky barrier,
oxygen vacancies diffusion
Supporting agencies: The work is supported by Russian Foundation of Basic Research Grant No. 16-08-00574 and Lomonosov Moscow State University Development Programme. Dmitrii Petukhov is also thankful to RF President Grant MK-799.2017.3 for the financial support.
About the Authors
P. A. Morozova
Skolkovo Institute of Science and Technology; Lomonosov Moscow State University, Department of Materials Science
Russian Federation
Russian Federation
Skolkovo, Nobel Street, 3, Moscow Region, 143026; Leninskie gory, 1, building 73, Moscow, 119991
D. I. Petukhov
Lomonosov Moscow State University, Department of Materials Science
Russian Federation
Russian Federation
Leninskie gory, 1, building 73, Moscow, 119991
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Review
For citations:
Morozova P.A., Petukhov D.I. Preparation of Au/TiO2/Ti memristive elements via anodic oxidation. Nanosystems: Physics, Chemistry, Mathematics. 2017;8(6):823-829. https://doi.org/10.17586/2220-8054-2017-8-6-823-829
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