Methodology of analyzing the CdSe semiconductor quantum dots parameters
https://doi.org/10.17586/2220-8054-2018-9-4-464-467
Abstract
Direct methods (using a laser particle size analyzer) and indirect (from the analysis of spectral characteristics and differential normalized tunnel CVC) methods of CdSe QD size estimation allowed determination of the size (4 – 5 nm) and shown good qualitative and quantitative agreement of the results with an error of less than 10 %. It is concluded that the tunnel differential CVC analysis is an effective method for express measurement that can be used in quantum-size object investigations.
Keywords
quantum dots,
cadmium selenide,
differential tunneling current-voltage characteristics,
energy spectrum
Supporting agencies: The authors are sincerely grateful to Prof. I. Goryacheva for provided samples of quantum dots. This work was supported by grants from the Russian Foundation for Basic Research Projects No. 16-07-00093 and No. 16-07-00185.
About the Authors
A. I. Mikhailov
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya 83, Saratov, 410012
V. F. Kabanov
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya 83, Saratov, 410012
E. G. Glukhovskoy
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya 83, Saratov, 410012
M. I. Shishkin
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya 83, Saratov, 410012
M. V. Gavrikov
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya 83, Saratov, 410012
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Review
For citations:
Mikhailov A.I., Kabanov V.F., Glukhovskoy E.G., Shishkin M.I., Gavrikov M.V. Methodology of analyzing the CdSe semiconductor quantum dots parameters. Nanosystems: Physics, Chemistry, Mathematics. 2018;9(4):464-467. https://doi.org/10.17586/2220-8054-2018-9-4-464-467
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