For citations:
Atamuratov A.E., Khalilloev M., Abdikarimov A., Atamuratova Z.A., Kittler M., Granzner R., Schwierz F. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate. Nanosystems: Physics, Chemistry, Mathematics. 2017;8(1):75-78. https://doi.org/10.17586/2220-8054-2017-8-1-75-78
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