Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
https://doi.org/10.17586/2220-8054-2018-9-6-789-792
Abstract
We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at low temperature. The lowest contact resistivity of about 4 · 10−6 Ω·cm2 was obtained with annealing under a hydrogen atmosphere. The mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structures sensible to a high temperature treatment.
Supporting agencies: Authors thanks V.P. Ulin for helpful discussions of the results. The work was supported by the Russian Science Foundation (grant No 17-79-30035).
About the Authors
D. M. Mitin
Ioffe Physical Technical Institute of the Russian Academy of Sciences
Russian Federation
Russian Federation
Politekhnicheskaya, 26, St. Petersburg, 194021
F. Yu. Soldatenkov
Ioffe Physical Technical Institute of the Russian Academy of Sciences
Russian Federation
Russian Federation
Politekhnicheskaya, 26, St. Petersburg, 194021
A. M. Mozharov
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Russian Federation
Russian Federation
Khlopina, 8, building 3, lit. A, St. Petersburg, 194021
A. A. Vasil’ev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Russian Federation
Russian Federation
Khlopina, 8, building 3, lit. A, St. Petersburg, 194021
V. V. Neplokh
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Russian Federation
Russian Federation
Khlopina, 8, building 3, lit. A, St. Petersburg, 194021
I. S. Mukhin
Saint Petersburg National Research Academic University of the Russian Academy of Sciences; Saint Petersburg National Research University of Information Technologies, Mechanics and Optics
Russian Federation
Russian Federation
Khlopina, 8, building 3, lit. A, St. Petersburg, 194021
Kronverkskiy, 49, St. Petersburg, 197101
References
1. Baca A.G., Ren F., Zolper J.C., Briggs R.D., Pearton S.J. A survey of ohmic contacts to III-V compound semiconductors. Thin Solid Films, 1997, 309, P. 599–606.
2. Kim T., Holloway P.H. Ohmic contacts to GaAs epitaxial layers. Crit. Rev. Solid State Mater. Sci, 1997, 22(3), P. 239–273.
3. Blank T.V., Gol’dberg Yu.A. Mechanisms of current flow in metal-semiconductor ohmic contacts. Semiconductors, 2007, 41(11), P. 1263– 1292.
4. Sands T., Marshall E.D., Wang L.C. Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases. J. Mater. Res., 1988, 3(5), P. 914–921.
5. Wang L.C. The Development of Solid Phase Regrowth on GaAs and its applications. MRS Proc, 1993, 319, P. 93.
6. Marshall E.D., Zhang B., Wang L.C., Jiao P.F., Chen W.X., Sawada T., Lau S.S., Kavanagh K.L. and Kuech T.F. Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge. J. Appl. Phys, 1987, 62(3), P. 942–947.
7. Lin C., Lee C.P. Comparison of Au/Ni/Ge, Au/Pd/Ge, and Au/Pt/Ge Ohmic contacts to n-type GaAs. J. Appl. Phys, 1990, 67(1), P. 260–263.
8. Hao P.H., Wang L.C., Deng F., Lau S.S., Cheng J.Y. On the low resistance Au/Ge/Pd ohmic contact to n-GaAs. J. Appl. Phys, 1996, 79(8), P. 4211–4215.
9. Wang L.C., Hao P.H., Cheng J.Y., Deng F., Lau S.S. Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 ◦C. J. Appl. Phys, 1996, 79(8), P. 4216–4220.
10. Berger H.H. Contact Resistance and Contact Resistivity. J. Electrochem. Soc, 1972, 119(4), P. 507–514.
11. Pahanov N.A., Andreev V.M., Shvartz M.Z., Phelyakov O.P. Modern Architectures and Technologies of High-efficienct Solar Cells in III–V Heterostructures for Space and Ground Applications. Autometria, 2018, 54(2), P. 93–112.
12. Orru M., Piazza V., Rubini S., Roddaro S. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires. Phys. Rev. Appl, 2015, 4, 44010.
Review
For citations:
Mitin D.M., Soldatenkov F.Yu., Mozharov A.M., Vasil’ev A.A., Neplokh V.V., Mukhin I.S. Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs. Nanosystems: Physics, Chemistry, Mathematics. 2018;9(6):789–792. https://doi.org/10.17586/2220-8054-2018-9-6-789-792
Views:
2
Email this article 