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| Vol 7, No 3 (2016) | Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature | Abstract PDF (Eng) similar documents |
| V. Gunasekaran, G. H. Park, K. S. Kim, M. Suemitsu, H. Fukidome | ||
| "... . In this work, multi-layer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed ..." | ||
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