How to make opposite state store again

The article shows the possibility of increasing the storage time of the opposite state (OS) at a temperature of 145 °C from 140 to 500 minutes in ferroelectric capacitors based on Hf_0.5Zr_0.5O₂ (HZO) by shift of current integration endpoint to right. Consideration of transient processes between measurement pulses after 500 minutes capacitors baking at 145 °C can enhance the OS retention from 21 to 35 % of the preheating state. Opposite trend detected for the same sate (SS) (decrease from 56 to 35 %) and new same state (NSS) (decrease from 63 to 45 %). It is also shown that the presence of a voltage shift caused by an imprint in some cases may not lead to a loss of polarization due to the current flowing during the flat part of the trapezoidal voltage pulse.

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