Calculation of characteristics of subnanometer delta-doped layers in diamond in the quasi-classical approach

It is shown that subnanometer boron delta-doped layers characteristics in chemically vapor deposited diamond films can be calculated in the quasi-classical approximation both in equilibrium and in an external electromagnetic field ionizing doping boron atoms. The corresponding solutions are found, in the first case – analytically, in the second – numerically. The use of the quasi-classical approximation allows one to simplify significantly the mathematical modeling of diamond structures with subnanometer delta-doped layers, necessary for their application in nanoelectronics, for example in high-speed field-effect transistors.

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