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| Issue | Title | |
| Vol 6, No 6 (2015) | The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3 N4 interfaceat | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, U. A. Aminov, Z. A. Atamuratova, M. Halillaev, A. Abdikarimov, H. Matyakubov | ||
| "... (MNOSFET) and p-channel MNOSFET with n+ drain area is studied. It is shown that the lateral capacitances ..." | ||
| Vol 8, No 1 (2017) | Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz | ||
| "... and non-extended lateral part of the gate. A trigate SOI JLMOSFET with gate length Lgate, a silicon body ..." | ||
| 1 - 2 of 2 Items | ||
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