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| Vol 6, No 6 (2015) | The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3 N4 interfaceat | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, U. A. Aminov, Z. A. Atamuratova, M. Halillaev, A. Abdikarimov, H. Matyakubov | ||
| "... or at SiO2 { Si3N4 interface and the concentration distribution of charge carriers on a semiconductor ..." | ||
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