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| Issue | Title | |
| Vol 16, No 3 (2025) | Influence of SiC MOSFET design on on-resistance and breakdown voltage | Abstract PDF (Eng) similar documents |
| O. B. Chukanova, K. A. Tsarik | ||
| "... of the device, we proposed to increase the doping level of the drift region, and suggested a new transistor ..." | ||
| Vol 13, No 5 (2022) | Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates | Abstract PDF (Eng) similar documents |
| M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, E. A. Arkhipova, M. N. Drozdov, V. A. Isaev, S. A. Bogdanov, V. A. Kukushkin | ||
| "... mobility compared to uniform doping with the same concentration of boron atoms. An explanation is proposed ..." | ||
| Vol 11, No 2 (2020) | Electronic transport in penta-graphene nanoribbon devices using carbon nanotube electrodes: A computational study | Abstract PDF (Eng) similar documents |
| M. Shunaid Parvaiz, Khurshed A. Shah, G. N. Dar, Sugata Chowdhury, Olasunbo Farinre, Prabhakar Misra | ||
| "... -doped model. In summary, our findings show clearly that doping can effectively modulate the electronic ..." | ||
| Vol 14, No 1 (2023) | Performance enhancement of triboelectric nanogenerator using iodine doped PVDF | Abstract PDF (Eng) similar documents |
| R. Phogaat, V. Yepuri | ||
| Vol 11, No 6 (2020) | Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit | Abstract PDF (Eng) similar documents |
| M. V. Dorokhin, P. B. Demina, Yu. M. Kuznetsov, I. V. Erofeeva, A. V. Zdoroveyshchev, M. S. Boldin, E. A. Lantsev, A. A. Popov, E. А. Uskova, V. N. Trushin | ||
| 1 - 5 of 5 Items | ||
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