NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2014, 5 (1), P. 117–122
INVESTIGATION OF STRUCTURE AND TRANSPORT PROPERTIES OF GRAPHENE GROWN BY LOW-PRESSURE NO FLOW CVD ON POLYCRYSTALLINE Ni FILMS
O.V. Kononenko – Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia; oleg@iptm.ru
V. N. Matveev – Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
D. P. Field – School of Mechanical and Materials Engineering, Washington State University, Pullman, WA
D.V. Matveev – Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
S. I. Bozhko – Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
D.V. Roshchupkin – Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
E. E. Vdovin – Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
A. N. Baranov – Moscow State University, Moscow, Russia
Graphene films were synthesized by the low-pressure no flow CVD on polycrystalline nickel catalyst films grown by the self-ion assisted deposition technique at different biases. Graphene films were transferred to a SiO2/Si substrate using PMMA. The graphene grown on Ni films with bimodal grain size distribution and weaker (111) texture had higher thickness uniformity and a lower number of graphene layers. The graphene grown on Ni films with a monomodal grain size distribution and stronger (111) texture had lower thickness uniformity and a higher number of graphene layers. The transport properties of the graphene films were investigated with the aid of Hall measurements.
Keywords: Graphene, CVD Synthesis, Electronic properties.
PACS 68.65.Pq; 81.05.ue; 73.50.Jt