NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2020, 11 (3), P. 301–306
Negative differential resistance in gate all-around spin field effect transistors
G. F. A. Malik – Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar-190006, India; Gfarozam@gmail.com
M. A. Kharadi – Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar-190006, India; firstname.lastname@example.org
F. A. Khanday – Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar-190006, India; email@example.com
K. A. Shah – Department of Physics, S. P. College, Cluster University Srinagar, M. A. Road Srinagar-190001, India; firstname.lastname@example.org
N. Parveen – Islamia College of Science and Commerce, Srinagar, J&K, India
In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three different channel materials are proposed and their transport properties are presented. The three channel materials used are Indium Arsenide (InAs), Indium Phosphide (InP) and Aluminum Antimonide (AlSb). Based on the type of semiconducting channel, the results are obtained and a comparison of transport properties among these three FETs is made. The proposed device offers both advantages of reduced power dissipation and compact size. The results reveal that the negative differential resistance (NDR) is observed in all modeled devices and the peak to valley current ratio (PVCR) effect is different in all structures and is maximum in AlSb based field effect transistor. It is expected that these results will find enormous applications in analog electronics and in the design of oscillators. Additionally, the observed results in this study have great potential for the design of various logic gates and digitals circuits.
Keywords: Spin-FET,gate all-around spin field effect transistors, multi-gate FETs, NDR, datta-das transistor.
PACS 73.50.Dn, 75.80.+q, 85