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NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2015, 6 (6), P. 833-836

Influence of the radius of the quantum dot and the nonquilibrium degree on the conversion efficiency of light emitting diodes

Kh. B. Ashurov – Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan
M. M. Adilov – Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan
S. E. Maksimov – Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan
B. L. Oksengendler – Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan; oksengendlerbl@yandex.ru

We describe the features of the conversion of electrical current into light in light diodes based on an organic matrix containing semiconductor quantum dots. It is shown that the relaxation channels of nonequilibrium electron-hole plasma injected into the quantum dot of the current density through the device. The conversion eciency increases signicantly with a decrease in the radius of the quantum dot.

Keywords: light diode, quantum dot, nonequilibrium e-h-plasma, internal efficiency.

PACS 75.50.Tt, 81.16.Hc, 87.85.Rs

DOI 10.17586/2220-8054-2015-6-6-833-836

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