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NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2012, 3 (2), P. 116–138

THE CATALYTIC ACTION OF VANADIUM AND ITS OXIDE (V) IN THE OXIDATION PROCESSES OF AIIIBV SEMICONDUCTORS

Irina Mittova – Voronezh State University, Voronezh, Russia, professor, science of materials and industry of nanosystems department, grand PhD (chemical sciences), professor, imittova@mail.ru
Elena Tomina – Voronezh State University, Voronezh, Russia, docent, science of materials and industry of nanosystems department, PhD (chemical sciences), docent, tomina-e-v@yandex.ru
Alexander Lapenko – Voronezh State University, Voronezh, Russia, research associate, science of materials and industry of nanosystems department, grand PhD (chemical sciences), inorg@chem.vsu.ru
Boris Sladkopevtcev – Voronezh State University, Voronezh, Russia, science of materials and industry of nanosystems department, dp-kmins@yandex.ru

The catalytic synchronous mechanism effect of deposited nanoscale layers of chemostimulaters V and V2O5 on the surface of InP and GaAs in the process of thermal oxidation these semiconductors was established. The proof of this mechanism is a abrupt decline in the effective activation energy of processes, a significant increase in the rate of film
growth compared with its own oxidation, regeneration of active particles containing V+5 (data of XRD, IRS, AES), the independence of the kinetic parameters of oxidation processes on the amount of applied catalyst. Thermal oxidation of InP in the presence of nanoislands of V2O5 in the initial stage of the process occurs mainly in those catalytically active centers (accordingly to the data of SEM, AES).
Keywords: heterostructure, chemical stimulated oxidation, transit, catalysis, gallium arsenide, indium phosphide.

UDC 542.943:546.881

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