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NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2016, 7 (3), P. 565–568

Observation of insulating and metallictype behavior in Bi2Se3 transistor
at room temperature

V. Gunasekaran – Research Institute of Electrical Communication, Tohoku University, 211, Katahira, Aobaku Sendai 9808577, Japan; guna@riec.tohoku.ac.jp
G. H. Park – Research Institute of Electrical Communication, Tohoku University, 211, Katahira, Aobaku Sendai 9808577, Japan
K. S. Kim – Research Institute of Electrical Communication, Tohoku University, 211, Katahira, Aobaku Sendai 9808577, Japan
M. Suemitsu – Research Institute of Electrical Communication, Tohoku University, 211, Katahira, Aobaku Sendai 9808577, Japan
H. Fukidome – Research Institute of Electrical Communication, Tohoku University, 211, Katahira, Aobaku Sendai 9808577, Japan; fukidome@riec.tohoku.ac.jp

Topological insulators are a new class of electronic materials with promising device applications. In this work, multilayer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed by mechanical exfoliation method. Electrical characterization of the FET has been studied at room temperature. We observed both insulating and metallic-type transport behavior when device was gate-biased. Electron-phonon scattering plays a vital role in observing this behavior. We assume that this sort of behavior could be raised from the inherent metallic surface and semiconducting interior bulk properties of Bi2Se3.

Keywords: bismuth selenide, topological insulator, transistors.

PACS 72.20.-i

DOI 10.17586/2220-8054-2016-7-3-565-568

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