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Nanosystems: Phys. Chem. Math., 2022, 13 (2), 148–155

Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

A. E. Atamuratov – Urgech State University, Urgench, 220100, Uzbekistan; atabek.atamuratov@yahoo.com
B.O. Jabbarova – Urgech State University, Urgench, 220100, Uzbekistan; bahorbahor1989@mail.ru
M. M. Khalilloev – Urgech State University, Urgench, 220100, Uzbekistan; x-mahkam@mail.ru
A. Yusupov – Tashkent University of Information Technologies, Tashkent, 100200, Uzbekistan; ayus@mail.ru
K. Sivasankaran – Vellore Institute of Technology, Vellore, Tamilnadu, India; ksivasankaran@vit.ac.in
J.C. Chedjou – University of Klagenfurt, Klagenfurt, 9020, Austria; jean.chedjou@aau.at

Corresponding author: A. E. Atamuratov, atabek.atamuratov@yahoo.com

PACS 85.30.Tv

DOI 10.17586/2220-8054-2022-13-2-148-155

ABSTRACT We study the impact of channel shape, back oxide, and gate oxide on the self-heating performance in nanoscale junctionless Fin Field Effect Transistor is studied through numerical simulation. The role of back oxide and gate oxide layers in setting the channel temperature is compared. Simulation results show that in the case of hafnium oxide (HfO2) as the gate oxide and silicon dioxide (SiO2) as the back oxide, the main role in setting the channel temperature corresponds to the base width of the channel that is in contact with the back oxide layer.

KEYWORDS self-heating effect, junctionless FinFET, channel shape, channel temperature.

ACKNOWLEDGEMENTS This research was funded by the Ministry of Innovative Development of the Republic of Uzbekistan in the frame of joint Uzbek-Indian project Uzb-Ind-2021-80.

FOR CITATION Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A., Sivasankaran K., Chedjou J.C. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET. Nanosystems: Phys. Chem. Math., 2022, 13 (2), 148–155.

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