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NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2017, 8 (5), P. 596–599

Features of the energy spectrum of indium antimonide quantum dots

A. I. Mikhailov – Saratov State University, Department of Nano- and Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia
V. F. Kabanov – Saratov State University, Department of Nano- and Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia
N. D. Zhukov – Saratov State University, Department of Nano- and Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia
E. G. Glukhovskoy – Saratov State University, Department of Nano- and Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia; glukhovskoy@gmail.com

Energy spectrum of indium antimonide (InSb) quantum dots (QD) was analyzed in this paper. Properties of energy spectrum levels were determined both by calculations and experiments using differential tunneling current-voltage characteristics (CVC) rated to static conductivity. It was confirmed that relatively large QD (size of about 20–25 nm) exhibit quantum size effects. Critical values of the characteristic parameters of InSb QD are analyzed, in which application of the differential tunneling current-voltage characteristics method for express analysis of the characteristic sizes of QD leads to significant errors (more than 10 %).

Keywords: quantum dots, indium antimonide, differential tunneling current-voltage characteristics, energy spectrum.

PACS 73.22.f, 73.21.La

DOI 10.17586/2220-8054-2017-8-5-596-599

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