NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2017, 8 (6), P. 823–829
Preparation of Au/TiO2/Ti memristive elements via anodic oxidation
P. A. Morozova – Skolkovo Institute of Science and Technology, Skolkovo, Nobel Street, 3, Moscow Region; Lomonosov Moscow State University, Department of Materials Science, Leninskie gory, 1, building 73, Moscow, 119991, Russia; firstname.lastname@example.org
D. I. Petukhov – Lomonosov Moscow State University, Department of Materials Science, Leninskie gory, 1, building 73, Moscow, 119991, Russia; email@example.com
In the present paper we report utilization of porous and barrier type of titania films formed by anodic oxidation as an active layer of the memristive element in the Au–TiO2–Ti structure. The comparison of semiconductor properties of porous and barrier type of anodic titania was performed via the Mott–Schottky technique. The obtained memristive elements show the bipolar type of switching governed by Schottky barrier screening. For barrier type film the switching potential is equal to -1.5 V and the ratio of resistance in OFF and ON stage (Roff=Ron) is equal to 34. For porous type films, the switching potential is equal to -0.6 V and Roff=Ron = 131. Moreover, we observed the dependence of Roff=Ron on the voltage sweeping rate, which can be explained by the limitation in diffusion of oxygen vacancies through the oxide layer.
Keywords: memristor, anodic titania, anodic oxidation, memristive element, Schottky barrier, oxygen vacancies diffusion.
PACS 85.30.Hi, 85.30.Kk, 85.30.Mn