NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2018, 9 (1), P. 67–69
High pressure photoluminescence studies of diamond with GeV centers
S. G. Lyapin – L. F. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow, Russia; lyapins@hppi.troitsk.ru
A. A. Razgulov – L. F. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow; Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow, Russia
A. P. Novikov – L. F. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow, Russia
E. A. Ekimov – L. F. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow, Russia
M.V. Kondrin – L. F. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow, Russia
We report low temperature (80 K) photoluminescence studies of microcrystalline diamond with germanium-vacancy (GeV) centers under hydrostatic pressure up to 6 GPa. Powders of Ge-doped diamond crystals were synthesized from hydrocarbons at high-pressures and high-temperatures. Due to the high quality of the samples, we were able to resolve the distinct quadruplet structure of the zero-phonon line (ZPL) of the GeV center already at 80 K and to trace it up to ~ 6 GPa. The pressure dependence of ZPL was found to be linear with the pressure coefficient dE/dP = 3.1 meV/GPa, which is nearly 3 times higher than that for the isomorphic SiV- center. The experimentally observed pressure coefficients of GeV-, NV- and NV0 centers are compared with results of abinitio DFT calculations, using Quantum ESPRESSO software package.
Keywords: diamond, colour centers, high pressure, DAC.
PACS 33.50.Dq, 62.50p
DOI 10.17586/2220-8054-2018-9-1-67-69
