NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2019, 10 (6), P. 720–724
Methodology of analyzing the InSb semiconductor quantum dots parameters
A. I. Mikhailov – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia
V. F. Kabanov – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia
M.V. Gavrikov – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia; maks.gavrikov.96@gmail.com
The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.
Keywords: quantum dots, indium antimonide, differential tunnel current-voltage characteristics, energy spectrum.
DOI 10.17586/2220-8054-2019-10-6-720-724
