NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2020, 11 (4), P. 488–492
Fabrication and characterization of spectrally selective glazing dielectric multilayer structures
Venkatesh Yepuri – Department of Nanotechnology, Swarnandhra College of Engineering and Technology, Seetharampuram, Narsapur (A.P.); Amity Institiute of Nanotechnology, Amity University, Gurgaon, (Haryana), India
R. S. Dubey – Department of Nanotechnology, Swarnandhra College of Engineering and Technology, Seetharampuram, Narsapur (A.P.), India; rag_pcw@yahoo.co.in
Brijesh Kumar – Amity Institiute of Nanotechnology, Amity University, Gurgaon, (Haryana), India
We report the fabrication of three- and five-layered based TiO2/SiO2 dielectric structures as the back-end reflector application in thin film silicon solar cells. These dielectric structures are prepared by the combined sol-gel and spin-coating techniques. X-ray diffraction (XRD) analysis of both the three- and five-layered based structures confirmed the anatase phase of TiO2 with its dominant peak at 2O=25°. Field-emission scanning electron microscopy (FESEM) study demonstrated the formation of three and five alternate layers of TiO2 and SiO2 films. Comparatively, five-layered based reflector yielded the maximum (100 %) reflectance in the near-infrared (NIR) wavelength region as evidenced by the UV-Vis spectroscopy investigation.
Keywords: sol-gel method, thin films, bragg reflectors, dielectric materials.
DOI 10.17586/2220-8054-2020-11-4-488-492