NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2020, 11 (6), P. 680–684
Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit
M.V. Dorokhin – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia; dorokhin@nifti.unn.ru
P. B. Demina – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
Yu. M. Kuznetsov – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
I.V. Erofeeva – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
A.V. Zdoroveyshchev – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
M. S. Boldin – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
E. A.Lantsev – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
A. A. Popov – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
E. A. Uskova – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
V. N. Trushin – Lobachevsky State University of Nizhny Novgorod, Gagarin ave. 23, Nizhniy Novgorod, 603950, Russia
Thermoelectric Si0.65Ge0.35Sbδ materials have been fabricated by spark plasma sintering of Ge–Si–Sb powder mixtures. The electronic properties of Si0.65Ge0.35Sbδ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.63 at 490 °C, the latter value is comparable with world-known analogues obtained for Si1-xGexPδ.
Keywords: thermoelectric energy converters, spark plasma sintering, doping, germanium-silicon, thermoelectric figure of merit.
PACS 72.15.Jf
DOI 10.17586/2220-8054-2020-11-6-680-684
