Nanosystems: Phys. Chem. Math., 2024, 15 (4), 465–468
Role of bulk and surface current carriers in resistivity of thin films of the topological insulator Bi2Se3
Alexandra N. Perevalova – M. N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, 620108, Ekaterinburg, Russia; domozhirova@imp.uran.ru
Bogdan M. Fominykh – M. N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, 620108, Ekaterinburg, Russia
Vasiliy V. Chistyakov – M. N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, 620108, Ekaterinburg, Russia
Vyacheslav V. Marchenkov – M. N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, 620108, Ekaterinburg, Russia; march@imp.uran.ru
Corresponding author: Alexandra N. Perevalova, domozhirova@imp.uran.ru
PACS 73.50.-h, 73.63.-b
DOI 10.17586/2220-8054-2024-15-4-465-468
ABSTRACT The temperature dependences of the electrical resistivity of topological insulator Bi2Se3 thin films with thicknesses of 20 and 40 nm were measured in the temperature range from 4.2 to 80 K. Their resistivity was shown to depend on thickness. A method was proposed for “separation” of the bulk and surface resistivity of films, with the help of which corresponding estimates were made. It was demonstrated that the surface resistivity is more than two orders of magnitude less than the bulk resistivity at T = 4.2 K.
KEYWORDS thin films, Bi2Se3, topological insulator, electrical resistivity, bulk and surface resistivities
ACKNOWLEDGEMENTS The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. 122021000036-3). The authors thank J.C. A. Huang for providing thin films and E. B. Marchenkova for assistance in their characterization.
FOR CITATION Perevalova A.N., Fominykh B.M., Chistyakov V.V., Marchenkov V.V. Role of bulk and surface current carriers in resistivity of thin films of the topological insulator Bi2Se3. Nanosystems: Phys. Chem. Math., 2024, 15 (4), 465–468.
[In Russian] А.Н. Перевалова, Б.М. Фоминых, В.В. Чистяков, В.В. Марченков
Роль объемных и поверхностных носителей тока в электросопротивлении тонких пленок топологического изолятора Bi2Se3
УДК 537.9
АННОТАЦИЯ В интервале температур от 4.2 до 80 K измерены температурные зависимости электросопротивления тонких пленок топологического изолятора Bi2Se3 толщиной 20 и 40 нм. Показано, что их удельное сопротивление зависит от толщины. Предложена методика «разделения» вкладов объема и поверхности в электросопротивление пленок, с помощью которой сделаны соответствующие оценки. Продемонстрировано, что при Т = 4.2 K величина поверхностного электросопротивления более чем на 2 порядка меньше объемного.
КЛЮЧЕВЫЕ СЛОВА тонкие пленки, Bi2Se3, топологический изолятор, электросопротивление, объемный и поверхностный вклады
