NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2018, 9 (1), P. 76–78
The memristive behavior of non-uniform strained carbon nanotubes
M.V. Il’ina – Southern Federal University, Research and Education Center “Nanotechnologies”, Taganrog, Russia; mailina@sfedu.ru
O. I. Il’in – Southern Federal University, Research and Education Center “Nanotechnologies”, Taganrog, Russia
N. N. Rudyk – Southern Federal University, Research and Education Center “Nanotechnologies”, Taganrog, Russia
A. A. Konshin – Southern Federal University, Research and Education Center “Nanotechnologies”, Taganrog, Russia
O. A. Ageev – Southern Federal University, Research and Education Center “Nanotechnologies”, Taganrog, Russia; ageev@sfedu.ru
It is shown that the non-uniform elastic strain is the memristive switching origin in carbon nanotubes (CNT). The dependence of the resistance ratio in high- and low- resistance states of the non-uniformly strained CNT on the value strain is obtained. The process of the strain redistribution and its effect on the conductivity of CNT under action of the external electric field strength is studied. The obtained results can be used to develop memristor structures with reproducible parameters based on non-uniformly strained of carbon nanotubes.
Keywords: carbon nanotube, strain, memristive switching, piezoelectric effect, scanning tunnel microscopy.
PACS 73.63.Fg, 77.65.Ly
DOI 10.17586/2220-8054-2018-9-1-76-78
