NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2018, 9 (6), P. 789–792
Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
D. M. Mitin – Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya, 26, St. Petersburg, 194021, Russia; mitindm@mail.ru
F.Yu. Soldatenkov – Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya, 26, St. Petersburg, 194021, Russia; f.soldatenkov@mail.ioffe.ru
A. M. Mozharov – Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Khlopina, 8, building 3, lit. A, St. Petersburg, 194021, Russia; mozharov@spbau.ru
A. A. Vasil’ev – Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Khlopina, 8, building 3, lit. A, St. Petersburg, 194021, Russia; ftf.vasiliev@yandex.ru
V.V. Neplokh – Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Khlopina, 8, building 3, lit. A, St. Petersburg, 194021, Russia; vneplokh@spbau.ru
I. S. Mukhin – Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Khlopina, 8, building 3, lit. A, St. Petersburg, 194021; Saint Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy, 49, St. Petersburg, 197101, Russia; imukhin@yandex.ru
We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at low temperature. The lowest contact resistivity of about 4 ⋅ 10-6 Ω ⋅ cm2 was obtained with annealing under a hydrogen atmosphere. The mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structure sensible to a high temperature treatment.
Keywords: GaAs, ohmic contact, contact resistivity, thermal annealing, solid-phase regrowth.
PACS 81.05.Ea, 73.61.Ey, 73.40.Cg, 81.40.Ef
DOI 10.17586/2220-8054-2018-9-6-789-792