NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2012, 3 (6), P. 36–46
INVESTIGATION OF THE ELECTRON-PHONON INTERACTION IN STRUCTURES InAs/AlSb IN QUANTIZATION MAGNETIC FIELDS REGIME
M.M. Afanasova – Ryazan State University named after S.A. Esenin, Ryazan, Russia, senior staff scientist, doctor of physical and mathematical Sciences, email@example.com
V.A. Stepanov – Ryazan State University named after S.A. Esenin, Ryazan, Russia, professor, doctor of physical and mathematical Sciences, firstname.lastname@example.org
M.A. Korgavchikov – Ryazan State University named after S.A. Esenin, Ryazan, Russia, Engineer, email@example.com
Study of transverse magnetoresistance oscillations ρxx(B) were performed for InAs/AlSb samples with different doping level at temperatures T=(4÷28)К. Based on test of magnetic field dependence amplitude ρxx(B) the formation dynamic of Landau quantization destruction was established. The components of the electron-electron and the electron-phonon interactions were marked out and the relaxation time τq(τee, τe−ph) was evaluated. On the base of physical model of electron interaction the role of electron-phonon relaxation was revealed as a factor, which stabilizes the process of Landau quantization destruction. Experimental nonlinear dependence τq(T) is explained by electron scattering by piezoelectric and deformation potential of acoustic phonons and channels competition inter-(intra-) subband scattering. Parametric dependence of quantum relaxation time from the magnetic field τq ∝ B−0.6 was established.
Keywords: 2D electron gas, relaxation time, electron-phonon interaction, magnetoresistance.