NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2013, 4 (6), P. 800–809
A QUANTITATIVE MODEL FOR QUANTUM TRANSPORT IN NANOTRANSISTORS
U. Wulf – BTU Cottbus-Senftenberg, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany; email@example.com
M. Krahlisch- BTU Cottbus-Senftenberg, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany; TheBrute@gmx.de
J. Kučera – Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Praha 6, Czech Republic; firstname.lastname@example.org
H. Richter – BTU Cottbus-Senftenberg, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany; email@example.com
J. Höntschel – GLOBALFOUNDRIES Dresden, Wilschdorfer Landstraße 101, 01109 Dresden, Germany; firstname.lastname@example.org
In a number of recent publications, a one-dimensional effective model for quantum transport in a nano-transistor was developed yielding qualitative agreement with the trace of an experimental transistor. To make possible a quantitative comparison, we introduce three phenomenological parameters in our model, the first one describing the overlap between the wave functions in the contacts and in the transistor channel, the second one is the transistor temperature, and the third one is the maximum height of the source-drain barrier. These parameters are adjusted to the traces of three experimental transistors. An accurate fit is obtained if the three adjustable parameters are determined for each gate voltage resulting in three calibration functions. In the threshold- and subthreshold regime the calibration functions are physically interpretable and allow one to extract key data from the transistors, such as their working temperature, their body factor, a linear combination of the flat band voltage and the built-in potential between substrate and source contact,
and the quality of the wave function coupling between the contacts and the electron channel.
Keywords: nano-transistor, quantum transport, quantitative transistor model, nano-FET, drain current.