NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2014, 5 (1), P. 81–85
SIMULATION OF SECONDARY ELECTRON TRANSPORT IN THIN METAL AND FULLERITE FILMS
E. O. Petrenko – Kiev institute for Nuclear research NAS of Ukraine. Nauky av., 47, Kiev, Ukraine; email@example.com
M.V. Makarets – Taras Shevchenko National University of Kyiv, Phys. Dep. Akad. Glushkov av. 4, Kiev, 03022, Ukraine
V. M. Mikoushkin – Ioffe Institute, 194021, St. Petersburg, Russia
V. M. Pugach – Kiev institute for Nuclear research NAS of Ukraine. Nauky av., 47, Kiev, Ukraine
Excitation processes and transport of recoiled and secondary electrons generated in fullerite and metal films under photons and electron irradiation were studied by computer simulation. Studied processes resulting in polymerization of fullerite were considered as the basic ones in formation of a pixel in electron nanolithography with fullerite film as an electron-beam resist. Reliability of the computer model and the important role of secondary electrons in the process of pixel formation were confirmed by comparison of the sizes of the calculated secondary electron swarm and the experimental cluster-pixel obtained previously. The photoelectron yield dependence on the incident photon’s energy was also obtained with the same computer model for metal foils which can be used as a radiation stripdetector.
Keywords: Fullerite, Films, Electron beams, Electronic properties.
PACS 61.48.c; 85.40.Hp; 61.80.Fe