NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2014, 5 (2), P. 307–314
EFFECT OF THE MILD METHOD OF FORMATION VxOy/InP STRUCTURES USING V2O5 GEL ON THE PROCESS OF THEIR OXIDATION AND COMPOSITION OF NANOSIZED OXIDE FILMS
I.Ya. Mittova – Voronezh State University, Voronezh, Russia; email@example.com
E.V. Tomina – Voronezh State University, Voronezh, Russia
B.V. Sladkopevtcev – Voronezh State University, Voronezh, Russia
A VxOy/InP structure was formed by the deposition of a V2O5 gel aerosol on an InP surface, followed by thermal annealing. This approach avoids chemostimulator interactions with the substrate prior to thermal oxidation, which is characteristic of ‘hard’ methods of chemostimulator deposition. The oxidation process of such structures occurs in the transit mechanism with a slight increase growth rate of films by 20–40 % in comparison with the oxidation of InP. The transit action of chemostimulator has been associated with the chemical bonding of V2O5 into InVO4 (XRD), which predominates over mutual transformations of vanadium oxide, which forms in different oxidation states.
Keywords: indium phosphide, chemical stimulated oxidation, V2O5 gel.
PACS 81.05.Ea, 81.16.Be, 81.65.Mq