NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2014, 5 (3), P. 343-353
CHANNELS OF ELECTRON-ELECTRON INTERACTIONS IN HIGHLY DOPED HETEROJUNCTION
V. A. Ambartsumyan – Ryazan State Radioengineering University, Ryazan, Russia
E. A. Andryushchenko – Ryazan State Radioengineering University, Ryazan, Russia
K. V. Bukhenskyy – Ryazan State Radioengineering University, Ryazan, Russia
A. B. Dubois – Ryazan State Radioengineering University, Ryazan, Russia; dubois.a.b@rsreu.ru
E. A. Dvoretskova – Ryazan State Radioengineering University, Ryazan, Russia
T. V. Gordova – Moscow State University of Economics, Statistics and Informatics (Ryazan filial), Russia
N. I. Ivanova – Moscow State University of Economics, Statistics and Informatics (Yaroslavl filial), Russia
S. I. Kucheryavyy – Institute of Atomic Energy of National Research Nuclear University of Moscow Engineer-Physics University, Obninsk, Russia
S. N. Mashnina – Moscow State University of Economics, Statistics and Informatics (Ryazan filial), Russia
A. S. Safoshkin – Ryazan State Radioengineering University, Ryazan, Russia
Electron-electron interactions in a single highly doped heterojunction are considered, taking into account both intra- and intersubband transitions. Expressions are derived for the time of electron-electron interaction, matrix elements of the full screening potential and dynamic dielectric function in a 2D electron system with the ne structure of the energy spectrum, and for the electron density spatial distribution. The theoretical dependences τeeth(T; ns) provide a good description of the experimental times of Landau levels collisional broadening τqexp(T; ns).
Keywords: electron-electron interactions, random phase approximation, Fourier analysis, Shubnikov-de Haas oscillations.
PACS 72.10.-d, 73.23.-b