NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2020, 11 (1), P. 110–116
Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
I.Ya. Mittova – Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia; imittova@mail.ru
V. F. Kostryukov – Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia; vc@chem.vsu.ru
N. A. Ilyasova – Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia; ilyasova 1997@mail.ru
B.V. Sladkopevtsev – Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia; dp-kmins@yandex.ru
A. A. Samsonov – Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia; samsonjr@mail.ru
The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO2/InP heterostructures (thickness of SnO2 layer ~ 50 nm). It was established that SnO2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO2 provides the formation of nanoscale films with semiconductor properties.
Keywords: indium phosphide, nanoscale films, thermal oxidation, tin dioxide.
DOI 10.17586/2220-8054-2020-11-1-110-116
