NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2018, 9 (4), P. 464–467
Methodology of analyzing the CdSe semiconductor quantum dots parameters
A. I. Mikhailov – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya 83, Saratov, 410012, Russia
V. F. Kabanov – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya 83, Saratov, 410012, Russia
E. G. Glukhovskoy – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya 83, Saratov, 410012, Russia; glukhovskoy@gmail.com
M. I. Shishkin – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya 83, Saratov, 410012, Russia
M.V. Gavrikov – Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya 83, Saratov, 410012, Russia
Direct methods (using a laser particle size analyzer) and indirect (from the analysis of spectral characteristics and differential normalized tunnel CVC) methods of CdSe QD size estimation allowed determination of the size (4 – 5 nm) and shown good qualitative and quantitative agreement of the results with an error of less than 10 %. It is concluded that the tunnel differential CVC analysis is an effective method for express measurement that can be used in quantum-size object investigations.
Keywords: quantum dots, cadmium selenide, differential tunneling current-voltage characteristics, energy spectrum.
PACS 73.22.Dj, 73.21.La
DOI 10.17586/2220-8054-2018-9-4-464-467
